DRIP XVIII: 18th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors

The DRIP XVIII conference focuses on all aspects of defects in semiconductors including point, line, planar and volume defects studied by a variety of tools. Most recent advances in the field of defect analysis will be discussed. This comprehensive approach has allowed for a discussion of the multifaceted effects of growth, processing, device fabrication as well as their interrelationships, and how to approach the study of defects.

The conference provides an outstanding international forum to present and discuss the correlation between crystal defects, device fabrication and degradation. DRIP-Flyer

The conference is organized by Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik and Leibniz Institute for Crystal Growth and will start with a welcome reception on Sunday, the 8th of September, at 6 pm, while the scientific programme starts on Monday morning.The conference ends on Thursday, Sep. 12th, after lunch (around 1-2 pm).

Registration and Abstract Submission are open!

Contact:

Dr. Anna Mogilatenko
Ferdinand-Braun-Institut Leibniz-Institut für Höchstfrequenztechnik
Gustav-Kirchhoff-Straße 4
12489 Berlin,
Germany Phone +49.30.6392-2679
Fax +49.30.6392-2685
E-mail: drip18@fbh-berlin.de

Prof. Dr. Matthias Bickermann
Leibniz Institute for Crystal Growth
Max-Born-Str. 2
12489 Berlin,
Germany Phone +49.30.6392-2679
Fax +49.30.6392-2685
E-mail: drip18@fbh-berlin.de